Electronic device

ABSTRACT

An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/902,124, filed Jun. 15, 2020, now pending, which is a continuation ofU.S. application Ser. No. 16/161,209, filed Oct. 16, 2018, now U.S. Pat.No. 10,685,992, which is a continuation of U.S. application Ser. No.14/990,934, filed Jan. 8, 2016, now U.S. Pat. No. 10,109,661, which is adivisional of U.S. application Ser. No. 13/224,655, filed Sep. 2, 2011,now U.S. Pat. No. 9,252,171, which claims the benefit of a foreignpriority application filed in Japan as Serial No. 2010-198928 on Sep. 6,2010, all of which are incorporated by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to an electronic device including acircuit using a photosensor and a transistor. For example, the presentinvention relates to an electronic device using, as its component, anelectro-optical device typified by a liquid crystal display panelutilizing a touch panel.

2. Description of the Related Art

A CMOS sensor is used mostly in digital cameras or cellular phones andhas an important imaging function. A CMOS sensor is a photosensorutilizing an amplifying function of a MOS transistor, and can bemanufactured by a general CMOS process. In addition, a CMOS sensorrequires lower driving voltage than a CCD sensor and thus leads to lowpower consumption of a solid-state imaging device.

A display device using a touch sensor is attracting attention. A displaydevice using a touch sensor is called a touch panel, a touch screen, orthe like (hereinafter also referred to simply as a touch panel). A touchpanel is used mostly in personal computers or cellular phones and allowsimage display and operation to be done on the same panel. PatentDocument 1 discloses a display device using an optical touch sensor.

A CMOS sensor performs three operations: storage of charge generated bya photodiode, read-out of the charge, and reset of the charge. Inperforming these three operations, a CMOS sensor uses a node that storescharge resulting from photocurrent generated by a photodiode (such anode is hereinafter referred to as an FD), and wire for supplying acontrol signal. Patent Document 2 discloses a structure of a solid-stateimaging device with a layout that allows the potential of such an FDstoring charge to be insusceptible to fluctuations in the potential of asignal line.

REFERENCE Patent Documents

-   [Patent Document 1] Japanese Published Patent Application No.    2001-292276-   [Patent Document 2] Japanese Published Patent Application No.    2006-148513

SUMMARY OF THE INVENTION

In case of presence of parasitic capacitance during these threeoperations which occurs between an FD that stores charge resulting fromphotocurrent generated by a photodiode and either wire that supplies acontrol signal or another signal line, changes in the signal causeschanges in the potential of the FD. As a result, the output of thephotosensor changes, so that imaging quality decreases.

In a display device using a CMOS sensor, each pixel includes an FD.Therefore, as in the case of wire in an imaging element, in case ofpresent of parasitic capacitance between a signal line in a displayelement and an FD, changes in the signal causes changes in the potentialof the FD. As a result, the output of the photosensor changes, so thatimaging quality decreases.

An object of one embodiment of the present invention is to provide apixel structure that prevents a decrease in imaging quality caused bychanges in the output of the photosensor.

One embodiment of the present invention provides a pixel layoutstructure in which a shielding wire is disposed between an FD and animaging signal line (a PR line, a TX line, or an SE line) or between theFD and an image-display signal line in order to reduce or eliminateparasitic capacitance between the FD and a signal line for the purposeof suppressing changes in the potential of the FD. An imaging powersupply line, an image-display power supply line, a GND line, a commonline, or the like whose potential is fixed, such as a common potentialline, is used as a shielding wire.

One embodiment of the present invention disclosed in this specificationsuppresses changes in the potential of an FD (node) by using twocapacity lines for the adjacent pixels as a first shielding wire and asecond shielding wire and disposing these lines between the FD and adisplay signal line. Specifically, this is an electronic deviceincluding a pixel structure including: a first transistor electricallyconnected to a first pixel electrode and a first signal line; a secondtransistor electrically connected to a photodiode; and a thirdtransistor electrically connected to a second pixel electrode and asecond signal line. The second transistor is electrically connected to anode storing charge. A first shielding wire is provided between the nodeand the first signal line electrically connected to the firsttransistor. A second shielding wire is provided between the node and thesecond signal line electrically connected to the third transistor. Notethat the phrase “a shielding wire is provided between the node and asignal line electrically connected to the first transistor” indicates apixel layout in which a shielding wire is provided between the node anda signal line when seen from above.

The above-stated structure resolves at least one of the above-mentionedproblems.

Another embodiment of the present invention suppresses changes in thepotential of an FD (node) by using a capacity line for a pixel as ashielding wire, disposing this line between the FD and a display signalline, and disposing the same shielding wire between the FD and a TXline. Specifically, this is an electronic device including: a firsttransistor electrically connected to a pixel electrode and a firstsignal line; and a second transistor electrically connected to aphotodiode. The second transistor is electrically connected to a nodestoring charge. A shielding wire is provided between the node and thefirst signal line electrically connected to the first transistor. Theshielding wire is provided between the node and a second signal lineelectrically connected to a gate of the second transistor.

The above-stated structure resolves at least one of the above-mentionedproblems.

Another embodiment of the present invention suppresses changes in thepotential of an FD (node) by using a capacity line for a pixel as ashielding wire, disposing this line between the FD and a display signalline, and disposing the same shielding wire between the FD and a PRline. Specifically, this is an electronic device including: a firsttransistor electrically connected to a pixel electrode and a firstsignal line; and a second transistor electrically connected to aphotodiode. The second transistor is electrically connected to a nodestoring charge. A shielding wire is provided between the node and thefirst signal line electrically connected to the first transistor. Theshielding wire is provided between the node and a second signal lineelectrically connected to the photodiode.

The above-stated structure resolves at least one of the above-mentionedproblems.

Another embodiment of the present invention suppresses changes in thepotential of an FD (node) by using a capacity line for a pixel as ashielding wire, disposing this line between the FD and a display signalline, and disposing the same shielding wire between the FD and an SEline. Specifically, this is an electronic device including: a firsttransistor electrically connected to a pixel electrode and a firstsignal line; a second transistor electrically connected to a photodiode;a third transistor a gate of which is a node storing charge; and afourth transistor electrically connected to the third transistor. Thesecond transistor is electrically connected to the node. A shieldingwire is provided between the node and the first signal line electricallyconnected to the first transistor. The shielding wire is providedbetween the node and a second signal line electrically connected to agate of the fourth transistor.

The above-stated structure resolves at least one of the above-mentionedproblems.

Reducing parasitic capacitance between a node and a signal line whichmay adversely affect the potential of the node can suppress fluctuationsin the output of a photosensor, thereby preventing imaging quality fromdecreasing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are external views illustrating one embodiment of thepresent invention.

FIG. 2 is a block diagram illustrating one embodiment of the presentinvention.

FIG. 3 is an equivalent circuit diagram of a pixel, illustrating oneembodiment of the present invention.

FIG. 4 is a schematic view of a driver circuit for photosensors,illustrating one embodiment of the present invention.

FIG. 5 is an equivalent circuit diagram of a pixel, illustrating oneembodiment of the present invention.

FIG. 6 is a timing diagram illustrating one embodiment of the presentinvention.

FIG. 7 is a layout pattern illustrating a pixel, illustrating oneembodiment of the present invention.

FIGS. 8A and 8B are a plan view and a cross-sectional view of atransistor connected to a photosensor and its periphery, illustratingone embodiment of the present invention.

FIGS. 9A and 9B are a diagram and a block diagram of an electronicdevice, illustrating one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the following description and it is easilyunderstood by those skilled in the art that the mode and details can bevariously changed. Moreover, the present invention should not beconstrued as being limited to the description of the embodiments below.

Embodiment 1

In this embodiment, an example of an electronic device 1030 including adisplay area 1032 in which an image is displayed using external lightwill be described with reference to FIGS. 1A and 1B.

The display area 1032 in the electronic device 1030 has a touch-inputfunction for which photo sensors are used. A plurality of keyboardbuttons 1031 is displayed on a display area region 1033 as illustratedin FIG. 1A. The display area 1032 indicates the entire display regionand includes the display area region 1033. A user inputs information bytouching desired keyboard buttons, so that the input information isdisplayed on the display area 1032.

An example of the usage of the electronic device 1030 will be described.For example, characters are input by either the user's fingerssuccessively touching keyboard buttons displayed on the display arearegion 1033 or noncontact, and the resulting text is displayed on aregion other than the display area region 1033. After a set period oftime during which no output signal of the photosensor is detected haspassed from when the user removes his finger from the keyboard on thescreen, the keyboard displayed on the display area region 1033 is erasedautomatically and the input text is displayed also on the display arearegion 1033, so that the user can see the input text with the wholescreen. In the case where input is performed again, the keyboard buttonscan be displayed on the display area region 1033 again and characterinput can also be performed by forcing the device to detect an outputsignal of a photosensor by either the user's fingers successivelytouching the display area 1032 or noncontact.

Alternatively, an image without the keyboard can be displayed on thedisplay area 1032 not automatically but by the user pushing a switch1034, as illustrated in FIG. 1B. The keyboard can be displayed and alsomade ready for touch input by pushing a keyboard display switch 1036.

In addition, the switch 1034, a power supply switch 1035, and thekeyboard display switch 1036 may be displayed on the display area 1032as switch buttons. Each operation may be performed by a touch on thedisplayed switch button.

The electronic device 1030 includes at least a battery, and preferablyincludes a memory for storing data (e.g., a flash memory circuit, anSRAM circuit, or a DRAM circuit), a central processing unit (CPU), or alogic circuit. With a CPU or a memory, the device can install variouskinds of software and thus can realize part or all of the functions of apersonal computer.

In addition, when a gradient detector such as a gyroscope or a triaxialacceleration sensor is provided in the electronic device 1030, afunction used in the electronic device 1030, particularly a functionrelating to display and input performed on the display area can beswitched by an arithmetic circuit in response to a signal from thegradient detector. Therefore, unlike an electronic device with an inputkey whose type, size, or location is predetermined, such as a built-inoperation key, the electronic device 1030 can improve the user'sconvenience.

Next, an example of a display panel included in the display area 1032will be described with reference to FIG. 2. A display panel 100 includesa pixel circuit 101, a display element control circuit, and aphotosensor control circuit. The pixel circuit 101 includes a pluralityof pixels 103, 104, 113, and 114 and a plurality of photosensors 106which are arranged in a matrix of rows and columns. Each of the pixels103, 104, 113, and 114 includes one display element. In this embodiment,one photosensor 106 is placed between the pixel 103 and the pixel 104and between the pixel 113 and the pixel 114. In other words, thisembodiment employs a pixel layout structure in which one photosensor isused for four pixels.

The pixels 103, 104, 113, and 114 each include a liquid crystal elementincluding a transistor, a storage capacitor, and a liquid crystal layer.The transistors are electrically connected to pixel electrodes 105, 115,125, and 135. The transistor has a function of controlling injection orejection of charge to/from the storage capacitor. The storage capacitorhas a function of retaining charge corresponding to a voltage applied tothe liquid crystal layer. Taking advantage of changes in polarizationdirection due to a voltage application to the liquid crystal layer,contrast of light passing through the liquid crystal layer (gray scale)is made, so that image display is realized. External light (sunlight orillumination light) which enters from the outside of a liquid crystaldisplay device is used as the light passing through the liquid crystallayer. There is no particular limitation on the liquid crystal layer,and a known liquid crystal material (typically, a nematic liquid crystalmaterial or a cholesteric liquid crystal material) may be used. Forexample, polymer dispersed liquid crystal (PDLC) or polymer networkliquid crystal (PNLC) may be used for the liquid crystal layer so that awhite image (a bright image) is displayed using scattered light byliquid crystal.

Further, the display element control circuit is a circuit configured tocontrol the pixels 103, 104, 113, and 114 and includes a display elementdriver circuit 107 which inputs a signal to the pixel electrodes 105,115, 125, and 135 through the transistor via a signal line (alsoreferred to as a source signal line) such as a video data signal line,and a display element driver circuit 108 which inputs a signal to thegate electrode of the transistor placed in each pixel via a scan line(also referred to as a gate signal line).

For example, the display element driver circuit 108 connected to thescan lines has a function of selecting the display elements included inthe pixels placed in a particular row. The display element drivercircuit 107 connected to the signal lines has a function of applying apredetermined potential to the display elements included in the pixelsplaced in the selected row. Note that in the display element to whichthe display element driver circuit 108 connected to the scan linesapplies high potential, the transistor is in a conduction state, so thatthe display element is supplied with charge from the display elementdriver circuit 107 connected to the scan lines.

The photosensor 106 includes a transistor and a light-receiving elementwhich has a function of generating an electrical signal when receivinglight, such as a photodiode.

The photosensor control circuit is a circuit configured to control thephotosensors 106 and includes a photosensor reading circuit 109connected to signal lines such as photosensor output signal lines andphotosensor reference signal lines, and a photosensor driver circuit 110connected to the scan lines. The photosensor driver circuit 110connected to the scan lines has a function of performing reset operationand selecting operation, which will be described later, on thephotosensors 106 included in the pixels placed in a particular row.Further, the photosensor reading circuit 109 connected to the signallines has a function of taking out output signals of the photosensors106 included in the pixels in the selected row.

A circuit diagram of the pixel 103 and the photosensor 106 will bedescribed in this embodiment with reference to FIG. 3.

A pixel 301 includes a transistor 330, a storage capacitor 331, and aliquid crystal element 332. A photosensor 302 includes a photodiode 351,a transistor 352, a transistor 353, and a transistor 354.

A gate of the transistor 330 is electrically connected to a gate signalline 310, one of a source and a drain of the transistor 330 iselectrically connected to a video data signal line 311, and the other ofthe source and the drain of the transistor 330 is electrically connectedto one electrode of the storage capacitor 331 and one of the electrodesof the liquid crystal element 332. The other electrode of the storagecapacitor 331 is electrically connected to a capacitor line 312 and heldat a fixed potential. The other electrode of the liquid crystal element332 is held at a fixed potential. The liquid crystal element 332 is anelement including a pair of electrodes and a liquid crystal layerprovided between the pair of electrodes.

When “H” (high-level potential) is applied to the gate signal line 310,the transistor 330 applies the potential of the video data signal line311 to the storage capacitor 331 and the liquid crystal element 332. Thestorage capacitor 331 holds the applied potential. The lighttransmittance of the liquid crystal element 332 is changed in accordancewith the applied potential.

One electrode of the photodiode 351 is electrically connected to aphotodiode reset signal line 341 (also referred to as a PR line), andthe other electrode is electrically connected to one of a source and adrain of the transistor 352. The other of the source and the drain ofthe transistor 352 is an FD (node).

The transistor 352 has a function of controlling and holding the voltageof the FD (node). The gate of the transistor 352 is connected to aphotosensor charge transmit signal line 342 (also referred to as a TXline). The signal line 342 has a function of controlling the switchingof the transistor 352.

A gate of the transistor 354 is the FD (node). One of a source and adrain of the transistor 354 is electrically connected to a power sourceline 344. Further, one of the source and the drain of the transistor 354is electrically connected to one of a source and a drain of thetransistor 353.

A gate of the transistor 353 is electrically connected to a photosensorreference signal line 345 (an SE line). The other of the source and thedrain of the transistor 353 is electrically connected to a photosensoroutput signal line 343 (also referred to as an OUT line).

Next, an example of a structure of the photosensor reading circuit 109will be described with reference to FIG. 4. As an example, the displayarea includes pixels provided in 1024 rows and 768 columns. One displayelement is provided in each pixel in the rows and columns and onephotosensor is provided to pixels in two rows and two columns. In otherwords, the display elements are provided in 1024 rows and 768 columns,and the photosensors are provided in 512 rows and 384 columns. Inaddition, this embodiment shows the case where a signal is output to theoutside of the display device under the condition that photosensoroutput signal lines in two columns are regarded as one pair. In otherwords, one output is obtained from two photosensors provided betweenfour pixels in two rows and two columns.

FIG. 3 illustrates a circuit configuration of pixels showing four pixelsand one photosensor provided in two rows and two columns. One displayelement is provided for each pixel and one photosensor is provided forfour pixels. FIG. 4 illustrates a circuit configuration of thephotosensor reading circuit 109, in which some photosensors areillustrated for explanation. Transistors each having a channel formationregion including an oxide semiconductor can be used as transistors shownin FIG. 3.

As an example, the case where a driving method in which, as illustratedin FIG. 4, a scan line driver circuit for photosensors drives pixels forfour rows (that is, photosensors for two rows) simultaneously and shiftsselected rows by one row including photosensors corresponding to pixelsfor two rows will be given. Here, photosensors in each row arecontinually selected in a period in which the scan line driver circuitshifts selected rows twice. Such a driving method facilitatesimprovement in frame frequency at the time of imaging by a photosensor.In particular, it is advantageous in the case of a large-sized displaydevice. Note that outputs of photosensors in two rows are superimposedon the photosensor output signal line 343 at one time. All of thephotosensors can be driven by repeating shift of selected rows 512times.

As illustrated in FIG. 4, in the photosensor reading circuit 109, oneselector is provided per pixels for 24 rows. The selector selects 1 pairfrom 12 pairs of photosensor output signal lines 343 (1 pair correspondsto photosensor output signal lines 211 for two columns) in the displayarea and obtains an output. In other words, the photosensor readingcircuit 109 includes 32 selectors in total and obtains 32 outputs at onetime. Selection is performed on all of the 12 pairs in each selector,whereby 384 outputs which correspond to one row of photosensors can beobtained in total. The selector selects 1 pair from the 12 pairs everytime selected rows are shifted by the scan line driver circuit ofphotosensors, whereby outputs from all of the photosensors can beobtained.

In this embodiment, the structure in which, as illustrated in FIG. 4,the photosensor reading circuit 109 connected to the signal lines takesout outputs of photosensors, which are analog signals, to the outside ofthe display device and the outputs are amplified with the use of anamplifier provided outside the display device and converted to digitalsignals with the use of an AD converter will be given. Needless to say,the following structure may also be employed: the AD converter ismounted on a substrate over which the display device is provided, andthe outputs of photosensors are converted to digital signals and thenthe digital signals are taken out to the outside of the display device.

A method for driving the photosensor circuit shown in FIG. 3 will bedescribed with a timing diagram of FIG. 6.

In the case shown in FIG. 6, a binary signal is applied to a TX910, aPR911, and an SE912 for convenience. Hereinafter, a high potential ofthe TX910 is referred to as “High-TX”; a low potential of the TX910,“Low-TX”; a high potential of the PR911, “High-PR”; a low potential ofthe PR911, “Low-PR”; a high potential of the SE912, “High-SE”; and a lowpotential of the SE912, “Low-SE”. Note that each potential is actuallyan analog signal, so that each potential does not necessarily have twovalues and may have any number of values depending on conditions.

First, at a time 901, the TX910 is brought “High-TX”. Next, at a time902, the PR911 is brought “High-PR”. Then, an FD potential 913 becomes“High-PR” which is the same as the potential of the PR911. This iscalled a reset operation.

When the PR911 is brought “Low-PR” at a time 903, the FD potential 913remains “High-PR”, which makes a PIN photodiode reverse-biased (thestart of a storage operation). At the same time, light enters an i-typelayer in the PIN photodiode and a flow of reverse current is produced,so that the amount of charge stored on the FD changes according to theamount of light.

When the TX910 is brought “Low-TX” at a time 904, movement of chargefrom the FD to the PIN photodiode stops, and the amount of charge storedon the FD is determined (the end of the storage operation).

When the SE912 is brought “High-SE” at a time 905, charge is suppliedfrom the power source line to the OUT line in accordance with the FDpotential 913 (the start of a reading operation).

When the SE912 is brought “Low-SE” at a time 906, supply of charge fromthe power source line to the OUT line is stopped, so that the OUT914 isdetermined (the end of the reading operation). The use of the OUT914 canreproduce a captured image.

After that, the operation at the time 901 is performed and the sameoperations as those described above are repeated.

In this embodiment, when the reset operation, the storage operation, andthe reading operation are performed on the photosensors, a partialshadow of external light can be detected. In addition, when imageprocessing or the like is performed on the detected shadowappropriately, a position where a finger, a pen, or the like touches thedisplay device can be recognized. Operation corresponding to theposition where the display device is touched, for example, as for inputof characters, kinds of characters are regulated in advance, so thatdesired characters can be input.

Note that in the display device in this embodiment, the partial shadowof external light is detected by the photosensors. Therefore, even if afinger, a pen, or the like does not touch the display device physically,when the finger, the pen, or the like gets close to the display devicewithout contact and a shadow is formed, detection of the shadow ispossible. Hereinafter, “a finger, a pen, or the like touches the displaydevice” includes the case where the finger, the pen, or the like isclose to the display device without contact.

With the above structure, the display area 1032 can have a touch-inputfunction.

Embodiment 2

In this embodiment, the configuration of a circuit which is partlydifferent from the circuit shown in FIG. 3 is shown in FIG. 5, and anexample of a pixel layout is shown in FIG. 7.

The pixel circuit includes a display circuit 3501 and a sensor circuit3502.

The display circuit includes a transistor 3530, a liquid crystal element3532, and a capacitor 3531. A gate of the transistor 3530 is connectedto a signal line 3510. One of a source and a drain of the transistor3530 is connected to a signal line 3511, and the other is connected toone electrode of the capacitor 3531 and one electrode of the liquidcrystal element 3532. The other electrode of the capacitor 3531 isconnected to a signal line 3512. The other electrode of the liquidcrystal element 3532 corresponds to a common electrode.

The sensor circuit includes a PIN photodiode 3551, a FET-T 3552, aFET-AMP 3554, and a FET-S 3553. A gate of the FET-T 3552 is connected toTX lines 3542 and 3547. One of a source and a drain of the FET-T 3552 isconnected to a cathode of the PIN photodiode 3551, and the other isconnected to a gate of the FET-AMP 3554.

A source of the FET-AMP 3554 is connected to a power source line 3544,and a drain of the FET-AMP 3554 is connected to a source of the FET-S3553. A gate of the FET-S 3553 is connected to a SE line 3545, and asource of the FET-S 3553 is connected to an OUT line 3543. An anode ofthe PIN photodiode 3551 is connected to PR lines 3541 and 3546.Transistors each having a channel formation region including an oxidesemiconductor can be used as transistors shown in FIG. 5.

FIG. 7 illustrates an example of a plan view of a pixel layoutcorresponding to the circuit diagram of FIG. 5.

The pixel layout includes layouts of four display circuits 3610 a, 3610b, 3610 c, and 3610 d, and a layout of a sensor circuit 3620. Thelayouts of the display circuits 3610 a, 3610 b, 3610 c, and 3610 d eachinclude a selection FET 3603, a Cs line 3601, a video data line 3602, aselection line 3600, and a COM line 3604.

The layout of the sensor circuit 3620 includes a PIN photodiode 3630, aFET-T including a semiconductor layer 3637, a FET-AMP including asemiconductor layer 3638, a FET-T including a semiconductor layer 3636,an FD 3641, a vertical TX line 3632, a horizontal TX line 3640, avertical PR line 3631, a horizontal PR line 3639, an SE line 3635, anOUT line 3633, and a VDD line 3634. There is no particular limitation ona material for the semiconductor layers 3636, 3637, and 3638. Forexample, a polycrystalline semiconductor film (e.g., a polysiliconfilm), a microcrystalline semiconductor film, or an oxide semiconductorfilm represented by the chemical formula InMO₃(ZnO)_(m) (m>0) can beused. Here, M represents one or more metal elements selected from Ga,Al, Mn, and Co. For example, M can be Ga, Ga and Al, Ga and Mn, Ga andCo, or the like. In addition, the above oxide semiconductor film maycontain SiO₂.

The pixel layout includes the following layers: semiconductor layers3636, 3637, and 3638, a gate line layer 3651, an SD line layer 3652, aSi layer 3653, and an ITO electrode layer 3654. The vertical TX line3632 and the vertical PR line 3631 are formed utilizing the SD linelayer 3652. The horizontal TX line 3640 and the horizontal PR line 3639are formed utilizing the gate line layer 3651. Horizontal lines andvertical lines have contacts with each other, thereby forming a meshlayout.

In the pixel layout, the Cs line 3601 serving as a shielding wire ispresent between the FD 3641 and either the video data line 3602 or asignal line for the adjacent pixel. Therefore, parasitic capacitancebetween the FD 3641 and the plurality of signal lines is reduced, orchanges in the potentials of neighbor elements due to the changes in thevoltages of the signal lines are prevented, thereby avoiding changes inthe potential of the FD.

A feature of the pixel layout is the fact that the FD 3641 has asufficient distance from the PR line, the SE line, and the OUT line forthe pixel in which the FD 3641 is provided and for the adjacent pixel.Thus, changes in the potential of the FD 3641 can be suppressed and adisplay device with an imaging function that causes less noise in anoutput signal of a photosensor can be provided.

FIG. 8A is an enlarged view of a part of FIG. 7, and FIG. 8B is anexample of a cross-sectional structure thereof.

Note that portions shown in FIG. 8A and FIG. 8B that are common to thosein FIG. 7 use the same reference numerals as those in FIG. 7.

In FIG. 8B, the gate line layer 3651 included in the transistorelectrically connected to the photodiode, and the horizontal PR line3639 which are formed using the same material and in the same processare formed over a substrate 500. Further, a gate insulating layer 502covering the gate line layer 3651 and the horizontal PR line 3639 isformed, and the semiconductor layer 3637 is formed over the gateinsulating layer 502 so as to overlap with the gate line layer 3651.

Moreover, the SD line 3652 that partly overlaps with the semiconductorlayer 3637 is formed, and the first interlayer insulating layer 505covering the SD line 3652 is formed. The PIN photodiode 3630 is aphotoelectric conversion layer which is a stack of a silicon layer 3653p containing a p-type impurity element, an i-type amorphous siliconlayer 3653 i, and a silicon layer 3653 n containing an n-type impurityelement.

Further, a second interlayer insulating layer 509 covering the PINphotodiode 3630 and the first interlayer insulating layer 505 is formed,and the ITO electrode 3654 using a transparent conductive film is formedover the second interlayer insulating layer 509. The ITO electrode 3654serves as a contact electrode for connecting the SD line 3652 for thetransistor including the semiconductor layer 3637 to the PIN photodiode3630. Note that the pixel electrode which is formed using the samematerial and in the same process as the ITO electrode 3654 is formed inthe display region.

The case where the transistor electrically connected to the PINphotodiode 3630 is a bottom-gate transistor has been shown in FIG. 8B;however, there is no particular limitation on the structure of thetransistor. The transistor may have another bottom-gate structure or atop-gate structure instead.

Embodiment 3

In this embodiment, an example of an electronic device including adisplay area (a touch panel) having the touch-input function that hasbeen described in the above embodiments will be described.

FIG. 9A illustrates an information terminal that can include housings9630, a display area 9631, operation keys 9632, a solar battery 9633,and a charge and discharge control circuit 9634. The informationterminal is provided with the solar battery 9633 and a touch panel sothat the solar battery 9633 and the touch panel can be opened and closedfreely. Note that in FIG. 9A, a structure of the information terminalincluding a battery 9635 and a DCDC converter (hereinafter abbreviatedas a converter 9636) is illustrated as an example of the charge anddischarge control circuit 9634.

Note that a structure in which the solar battery 9633 is provided oneach of a surface and a rear surface of the housing 9630 is preferablein order to charge the battery 9635 efficiently. The use of a lithiumion battery as the battery 9635 produces an advantage such asdownsizing.

The structure and the operation of the charge and discharge controlcircuit 9634 illustrated in FIG. 9A are described with reference to ablock diagram in FIG. 9B. The solar battery 9633, the battery 9635, theconverter 9636, a converter 9637, switches SW1 to SW3, and the displayarea 9631 are illustrated in FIG. 9B, and the battery 9635, theconverter 9636, the converter 9637, and the switches SW1 to SW3correspond to the charge and discharge control circuit 9634.

First, an example of the operation in the case where power is generatedby the solar battery 9633 using external light will be described. Thevoltage of power generated by the solar battery is raised or lowered bythe converter 9636 so that the power has a voltage for charging thebattery 9635. Then, when the power from the solar battery 9633 is usedfor the operation of the display area 9631, the switch SW1 is turned onand the voltage of the power is raised or lowered by the converter 9637so as to be a voltage needed for the display area 9631. In addition,when an image is not displayed on the display area 9631, the switch SW1is turned off and the switch SW2 is turned on so that charge of thebattery 9635 may be performed.

Note that although the solar battery 9633 is described as an example ofa charging method, the battery 9635 may be charged with another method.In addition, a combination of the solar battery 9633 and anothercharging method may be used.

Needless to say, one embodiment of the present invention is notnecessarily the electronic device shown in FIGS. 9A and 9B as long as itincludes a display area (a touch panel) having the touch-input functionthat has been described in the above embodiments.

This embodiment can be implemented in appropriate combination with anystructure described in the other embodiments.

This application is based on Japanese Patent Application serial No.2010-198928 filed with Japan Patent Office on Sep. 6, 2010, the entirecontents of which is hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a pixelcomprising: a photodiode; and a transistor; a first conductive layer; asecond conductive layer; and a third conductive layer, wherein the firstconductive layer is electrically connected to a cathode of thephotodiode, wherein the first conductive layer is electrically connectedto a gate electrode of the transistor, wherein the first conductivelayer comprises at least a part of a node in which charges correspondingto a photo current generated by the photodiode are accumulated, whereinthe second conductive layer is a wiring to which a potential is inputfrom an outside of the pixel, wherein the second conductive layer isconfigured such that a potential of the second conductive layer changes,wherein the third conductive layer is a wiring whose potential is fixed,wherein the first conductive layer, the second conductive layer and thethird conductive layer are over and in contact with a same insulatinglayer, wherein in a planar view, the first conductive layer comprises aregion overlapping the gate electrode of the transistor, and wherein ina planar view, the third conductive layer is positioned between theregion and the second conductive layer.
 2. The semiconductor deviceaccording to claim 1, wherein the transistor comprises a channelformation region in an oxide semiconductor layer.
 3. A semiconductordevice comprising: a pixel comprising: a photodiode; and a transistor; afirst conductive layer; a second conductive layer; and a thirdconductive layer, wherein the first conductive layer is electricallyconnected to a cathode of the photodiode, wherein the first conductivelayer is electrically connected to a gate electrode of the transistor,wherein the first conductive layer comprises at least a part of a nodein which charges corresponding to a photo current generated by thephotodiode are accumulated, wherein the second conductive layer is awiring to which a potential is input from an outside of the pixel,wherein the second conductive layer is configured such that a potentialof the second conductive layer changes, wherein the third conductivelayer is a wiring whose potential is fixed, wherein the first conductivelayer, the second conductive layer and the third conductive layer are ina same layer, wherein in a planar view, the first conductive layercomprises a region overlapping the gate electrode of the transistor, andwherein in a planar view, the third conductive layer is positionedbetween the region and the second conductive layer.
 4. The semiconductordevice according to claim 3, wherein the transistor comprises a channelformation region in an oxide semiconductor layer.